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12:30~ | Çà»ç µî·Ï | - | |||
13:00~13:10 | ¿¬±¸È¸ ȸÀå Àλ縻 | Á¤Áø¿í ±³¼ö (¿¬±¸È¸ ȸÀå) | |||
13:10~13:40 | High Aspect Ratio Contact Etch ¼³ºñÀÇ ¹®Á¦Á¡°ú ÇâÈÄ ÇÊ¿ä ±â¼ú | Á¶¼ºÀÏ ¸¶½ºÅÍ (»ï¼ºÀüÀÚ) | |||
13:40~14:10 | Etch Plasma Technology º¯È¿Í ½Ã¹Ä·¹ÀÌ¼Ç È°¿ë | ¼Û»óÇå ¼ö¼®¿¬±¸¿ø (SKÇÏÀ̴нº) | |||
14:10~14:40 | RF Breakdown ¹× Insulation ±â¼ú Àû¿ë ¹× ÀÀ¿ë-Paschen¡¯s Law ÀÀ¿ë | ¿ìÇöÁ¾ ÆÀÀå (¿øÀÍIPS) | |||
14:40~14:50 | Break | - | |||
14:50~15:20 | The path to 1,000-layer 3D NAND with Cryo 3.0 technology | À̵¿¼ö »ó¹«(·¥¸®¼Ä¡ÄÚ¸®¾Æ) | |||
15:20~15:50 | Reflecting on the historical milestones of semiconductor equipment and predicting- | Àü»óÁø Àü¹« (Å×½º) | |||
15:50~16:20 | ±ØÀú¿Â ½Ä°¢ ±â¼ú ¿ø¸®¿Í ÀÀ¿ë | Á¤Áø¿í ±³¼ö (ÇѾç´ë) | |||
16:20~16:30 | Break | - | |||
16:30~17:00 | Toward Accurate Topography Simulation in Next-Generation- | ÀÓ¿¬È£ ±³¼ö (ÀüºÏ´ë) | |||
17:00~17:30 | ÇöóÁ ÇÏÀ̺긮µå ¿þÀÌÆÛ º»µù | À¯½ÅÀç ±³¼ö (Ãæ³²´ë) | |||
17:30~18:00 | ÇöóÁ Áø´Ü/Á¦¾î ±â¼ú ÇöȲ |
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