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12:30~ | Çà»ç µî·Ï | - |
13:20~13:30 | ¼Ò°³ ¹× ¿¬±¸È¸ ȸÀå Àλ縻 | Á¤Áø¿í ±³¼ö (¿¬±¸È¸ ȸÀå) |
13:30~14:00 | ÃֽŠPlasma etch ÀåºñÀÇ ¾ç»ê¼ºÀ» À§ÇÑ ¿ä°Ç | ¹ÚÁ¾Ã¶ ¸¶½ºÅÍ (»ï¼ºÀüÀÚ) |
14:00~14:30 | Memory ½ºÄÉÀÏ ¹× ½ºÅܾ÷ À§ÇÑ ÇöóÁ & RF ±â¼ú | Àüº´°Ç TL (SKÇÏÀ̴нº) |
14:30~14:45 | ½Ä°¢ Àåºñ¸¦ À§ÇÑ Plasma ¹× °ü·Ã ±â¼ú | Á¤½ÂÇÊ »ó¹« (¼¼¸Þ½º) |
14:45~15:00 | Challenges and Opportunities for Plasma Deposition Equipments Technology | ½ÅÇüÁÖ »ó¹« (¿øÀÍIPS) |
15:00~15:15 | Break | - |
15:15~15:30 | TBD | À̸í¹ü ºÎ»çÀå (·¥¸®¼Ä¡ÄÚ¸®¾Æ) |
15:30~15:45 | Plasma Enhanced Technologies for the Future Generations | ¹Ú¿µ¿ì ºÎ»çÀå (µµÄìÀÏ·ºÆ®·Ð) |
15:45~16:00 | Ion beam ½Ä°¢ ÇöóÁ ±â¼ú | À̱æ¿ë Àü¹« (AMAT Korea) |
16:00~16:15 | ÃֽŠÇöóÁ °øÁ¤À» À§ÇÑ RF & Matcher ±â¼ú | Á¤Àçö Àü¹« (MKS) |
16:15~16:30 | Break | - |
16:30~16:50 | ±ØÀú¿Â ÀüÀÚ ¿Âµµ ÇöóÁ ¼Ò½º | Á¤Áø¿í ±³¼ö (ÇѾç´ë) |
16:50~17:10 | RF/Microwave¸¦ Ȱ¿ëÇÑ ÇöóÁ½Ç½Ã°£ Á¤¹ÐÁø´Ü | À¯½ÅÀç ±³¼ö (Ãæ³²´ë) |
17:10~17:30 | Plasma Atomic Layer Etching for Dielectric and Metals | äÈñ¿± ±³¼ö (¼º±Õ°ü´ë) |
17:30~18:00 | ÆÐ³Î µð½ºÄ¿¼Ç(±â¼ú ¹× Àη ¾ç¼º Çù·Â ¹æ¾È) ¹× ´Üü »çÁø | ¸ðµç ¿¬»ç |
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