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12:30~Çà»ç µî·Ï-
13:00~13:10¿¬±¸È¸ ȸÀå Àλ縻 Á¤Áø¿í ±³¼ö
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13:10~13:40 High Aspect Ratio Contact Etch ¼³ºñÀÇ ¹®Á¦Á¡°ú ÇâÈÄ ÇÊ¿ä ±â¼ú

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13:40~14:10Etch Plasma Technology º¯È­¿Í ½Ã¹Ä·¹ÀÌ¼Ç È°¿ë

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14:10~14:40

RF Breakdown ¹× Insulation ±â¼ú Àû¿ë ¹× ÀÀ¿ë-Paschen¡¯s Law ÀÀ¿ë

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14:40~14:50Break

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14:50~15:20The path to 1,000-layer 3D NAND with Cryo 3.0 technologyÀ̵¿¼ö »ó¹«(·¥¸®¼­Ä¡ÄÚ¸®¾Æ)
15:20~15:50Reflecting on the historical milestones of semiconductor equipment and predicting-

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15:50~16:20±ØÀú¿Â ½Ä°¢ ±â¼ú ¿ø¸®¿Í ÀÀ¿ë

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16:20~16:30Break
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16:30~17:00

Toward Accurate Topography Simulation in Next-Generation-

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17:00~17:30ÇöóÁ ÇÏÀ̺긮µå ¿þÀÌÆÛ º»µù

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17:30~18:00

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